DIODES Incorporated Single FETs, MOSFETs 2N7002W-7-F

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323

MOSFET N-CH 60V 115MA SOT323

MOSFET N-CH 60V 115MA SOT323 Product overview: 2N7002W-7-F from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 115MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 115MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002W-7-F can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 005735-2N7002W-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Family Name: 2N7002W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 50mA, 5V
Alternative Parts (Cross-Reference): 2N7002WT; 2N7002W-TP; 2N7002W;
Introduction Date: May 18, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient