DIODES Incorporated Single FETs, MOSFETs 2N7002TA

Description
N-Channel 60V 115mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet
Description
N-Channel 60V 115mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 2N7002TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002TR-ND
Single FETs, MOSFETs 2N7002TR-ND
N-Channel 60V 115mA (Ta) 330mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 115mA (Ta) 330mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002TA - 101143-2N7002TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002TA
101143-2N7002TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002TA 101143-2N7002TA
Manufacturer: Diodes Incorporated Win Source Part Number: 101143-2N7002TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 330mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 115mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 101143-2N7002TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 115mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002TA
MOSFET N-CH 60V 115MA SOT23-3

MOSFET N-CH 60V 115MA SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2N7002TR-ND 101143-2N7002TA 2N7002TA
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002TA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 60 volts
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