2N7002 FAMILY SOT23 T&R 3K Product overview: 2N7002KQ-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002KQ-7 can be used for catalog matching and distributor lookup.
2N7002 FAMILY SOT23 T&R 3K
2N7002 FAMILY SOT23 T&R 3K
2N7002 FAMILY SOT23 T&R 3K
Manufacturer: Diodes Incorporated
Win Source Part Number: 1124235-2N7002KQ-7
Manufacturer Homepage: www.diodes.com
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 60V, 0.38A, 150DEGC, 0.37W ROHS COMPLIANT: YES
2N7002 FAMILY SOT23 T&R 3K
2N7002 FAMILY SOT23 T&R 3K
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-2N7002KQ-7 | 31-2N7002KQ-7TR-ND | 1124235-2N7002KQ-7 | 69AH4475 | 2N7002KQ-7 | 2N7002KQ-7 |
| Product Name | SOT23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002KQ-7 | Mosfet, N-Ch, 60V, 0.38A, 150Degc, 0.37W Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 540 milliwatts | 370 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
