DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-7-F 2N7002E-7-F

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005721-2N7002E-7-F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: 2N7002E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.22nC @ 4.5V Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 250mA, 10V Alternative Parts (Cross-Reference): 2N7002; 2N7002K,215; 2N7002E-T1-E3; LT2N7002E; Introduction Date: September 24, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005721-2N7002E-7-F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: 2N7002E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.22nC @ 4.5V Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 250mA, 10V Alternative Parts (Cross-Reference): 2N7002; 2N7002K,215; 2N7002E-T1-E3; LT2N7002E; Introduction Date: September 24, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-7-F - 005721-2N7002E-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-7-F
005721-2N7002E-7-F
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-7-F 005721-2N7002E-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 005721-2N7002E-7-F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370mW (Ta) Family Name: 2N7002E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 250mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.22nC @ 4.5V Max Input Capacitance: 50pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 250mA, 10V Alternative Parts (Cross-Reference): 2N7002; 2N7002K,215; 2N7002E-T1-E3; LT2N7002E; Introduction Date: September 24, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 005721-2N7002E-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Family Name: 2N7002E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.22nC @ 4.5V
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 250mA, 10V
Alternative Parts (Cross-Reference): 2N7002; 2N7002K,215; 2N7002E-T1-E3; LT2N7002E;
Introduction Date: September 24, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002E-FDIDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002E-FDIDKR-ND
Single FETs, MOSFETs 2N7002E-FDIDKR-ND
N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002E-FDITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002E-FDITR-ND
Single FETs, MOSFETs 2N7002E-FDITR-ND
N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - 2N7002E-FDICT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2N7002E-FDICT-ND
Single FETs, MOSFETs 2N7002E-FDICT-ND
N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

N-Channel 60V 250mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Singapore
60V 250MA SOT23 MOSFET Transistor
278-2N7002E-7-F
60V 250MA SOT23 MOSFET Transistor 278-2N7002E-7-F
MOSFET N-CH 60V 250MA SOT23-3 Product overview: 2N7002E-7-F from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 250MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 250MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002E-7-F can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 250MA SOT23-3 Product overview: 2N7002E-7-F from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 250MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 250MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002E-7-F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2N7002E-7-F - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
2N7002E-7-F
Single FETs, MOSFETs 2N7002E-7-F
MOSFET N-CH 60V 250MA SOT23-3

MOSFET N-CH 60V 250MA SOT23-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002E-7-F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002E-7-F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002E-7-F
MOSFET N-CH 60V 250MA SOT23-3

MOSFET N-CH 60V 250MA SOT23-3

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
2N7002E-7-F
Triode/MOS Tube/Transistor >> MOSFETs 2N7002E-7-F
60V 250mA 3Ω@10V,250mA 370mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS

60V 250mA 3Ω@10V,250mA 370mW 2.5V@250uA N Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Channel

MOSFET N-Channel

Buy Now Datasheet
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant Diodes Inc. - 89AH0599 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant Diodes Inc.
89AH0599
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant Diodes Inc. 89AH0599
MOSFET, N-CH, 60V, 0.25A, SOT-23 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 0.25A, SOT-23 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 005721-2N7002E-7-F 2N7002E-FDIDKR-ND 278-2N7002E-7-F 2N7002E-7-F 2N7002E-7-F 2N7002E-7-F 2N7002E-7-F 89AH0599
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002E-7-F Single FETs, MOSFETs 60V 250MA SOT23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
PD 370 milliwatts 540 milliwatts 370 milliwatts 370 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23 TO-3; SOT23
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