DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002DWA-7 2N7002DWA-7

Manufacturer: Diodes Incorporated
Win Source Part Number: 1004056-2N7002DWA-7
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 180mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.87nC @ 10V
Max Input Capacitance: 22pF @ 25V
Maximum Rds On at Id,Vgs: 6 Ohm @ 115mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Automation & Process Control, Portable Devices, Communications & Networking, Sensing & Instrumentation

Mosfet Array 2 N-Channel (Dual) 60V 180mA 300mW Surface Mount SOT-363

MOSFET 2N-CH 60V 0.18A SOT363 Product overview: 2N7002DWA-7 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.18A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-2N7002DWA-7 can be used for catalog matching and distributor lookup.