DIODES Incorporated Single Bipolar Transistors 2DD2678-13

Description
Bipolar (BJT) Transistor NPN 12V 3A 170MHz 900mW Surface Mount SOT-89-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 12V 3A 170MHz 900mW Surface Mount SOT-89-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2DD2678DITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2DD2678DITR-ND
Single Bipolar Transistors 2DD2678DITR-ND
Bipolar (BJT) Transistor NPN 12V 3A 170MHz 900mW Surface Mount SOT-89-3

Bipolar (BJT) Transistor NPN 12V 3A 170MHz 900mW Surface Mount SOT-89-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2DD2678-13 - 005686-2DD2678-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DD2678-13
005686-2DD2678-13
TRANSISTORS - Transistors (BJT) - Single - 2DD2678-13 005686-2DD2678-13
Manufacturer: Diodes Incorporated Win Source Part Number: 005686-2DD2678-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 250mV @ 30mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 500mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 005686-2DD2678-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 170MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 250mV @ 30mA, 1.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 270 @ 500mA, 2V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DD2678-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2DD2678-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2DD2678-13
TRANS NPN 12V 3A SOT89-3

TRANS NPN 12V 3A SOT89-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2DD2678-13
Bipolar Transistors - BJT 2DD2678-13
Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K

Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2DD2678DITR-ND 005686-2DD2678-13 2DD2678-13 2DD2678-13
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2DD2678-13 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN
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