DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13 2DD2661-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 038871-2DD2661-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 180mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13 - 038871-2DD2661-13 - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 2DD2661-13 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity Diodes Inc. - 25R5675 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DD2661-13 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 038871-2DD2661-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 180mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13 - 038871-2DD2661-13 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13
038871-2DD2661-13
TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13 038871-2DD2661-13
Manufacturer: Diodes Incorporated Win Source Part Number: 038871-2DD2661-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 180mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 038871-2DD2661-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 170MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 180mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 270 @ 200mA, 2V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2DD2661-13 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2DD2661-13
Single Bipolar Transistors 2DD2661-13
TRANS NPN 12V 2A SOT89-3

TRANS NPN 12V 2A SOT89-3

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
12V 2A SOT89 Bipolar Transistor
276-2DD2661-13
12V 2A SOT89 Bipolar Transistor 276-2DD2661-13
TRANS NPN 12V 2A SOT89-3 Product overview: 2DD2661-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 2A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2DD2661-13 can be used for catalog matching and distributor lookup.

TRANS NPN 12V 2A SOT89-3 Product overview: 2DD2661-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 2A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2DD2661-13 can be used for catalog matching and distributor lookup.

Supplier's Site
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity Diodes Inc. - 25R5675 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity Diodes Inc.
25R5675
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity Diodes Inc. 25R5675
TRANSISTOR, NPN, 12V, 1A, 900mW, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:900mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR, NPN, 12V, 1A, 900mW, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:900mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2DD2661-13
Bipolar Transistors - BJT 2DD2661-13
Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K

Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DD2661-13 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2DD2661-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2DD2661-13
TRANS NPN 12V 2A SOT89-3

TRANS NPN 12V 2A SOT89-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 038871-2DD2661-13 2DD2661-13 276-2DD2661-13 25R5675 2DD2661-13 2DD2661-13
Product Name TRANSISTORS - Transistors (BJT) - Single - 2DD2661-13 Single Bipolar Transistors 12V 2A SOT89 Bipolar Transistor Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity Diodes Inc. Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN NPN
Package Type SOT3; SOT89; SOT-89-3 SOT89; TO-243AA Tape & Reel (TR) TO-3; SOT89
IC(max) 2000 milliamps 4000 milliamps 2000 milliamps
VCEO 12 volts 12 volts 12 volts
Operating Frequency 170 MHz
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