DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - 2DB1714-13 2DB1714-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005677-2DB1714-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 370mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 005677-2DB1714-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 370mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2DB1714-13 - 005677-2DB1714-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DB1714-13
005677-2DB1714-13
TRANSISTORS - Transistors (BJT) - Single - 2DB1714-13 005677-2DB1714-13
Manufacturer: Diodes Incorporated Win Source Part Number: 005677-2DB1714-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 370mV @ 75mA, 1.5A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 200mA, 2V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 005677-2DB1714-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 370mV @ 75mA, 1.5A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 270 @ 200mA, 2V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DB1714-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2DB1714-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2DB1714-13
TRANS PNP 30V 2A SOT89-3

TRANS PNP 30V 2A SOT89-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 005677-2DB1714-13 2DB1714-13
Product Name TRANSISTORS - Transistors (BJT) - Single - 2DB1714-13 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
Unlock Full Specs
to access all available technical data