DIODES Incorporated Single Bipolar Transistors 2DB1694-7

Description
TRANS PNP 30V 1A SOT323
Request a Quote Datasheet
Description
TRANS PNP 30V 1A SOT323
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2DB1694-7 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2DB1694-7
Single Bipolar Transistors 2DB1694-7
TRANS PNP 30V 1A SOT323

TRANS PNP 30V 1A SOT323

Supplier's Site Datasheet
Single Bipolar Transistors - 2DB1694DITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2DB1694DITR-ND
Single Bipolar Transistors 2DB1694DITR-ND
Bipolar (BJT) Transistor PNP 30V 1A 300MHz 300mW Surface Mount SOT-323

Bipolar (BJT) Transistor PNP 30V 1A 300MHz 300mW Surface Mount SOT-323

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2DB1694-7 - 005676-2DB1694-7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DB1694-7
005676-2DB1694-7
TRANSISTORS - Transistors (BJT) - Single - 2DB1694-7 005676-2DB1694-7
Manufacturer: Diodes Incorporated Win Source Part Number: 005676-2DB1694-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 380mV @ 25mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 270 @ 100mA, 2V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 005676-2DB1694-7
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 380mV @ 25mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 270 @ 100mA, 2V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DB1694-7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2DB1694-7
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2DB1694-7
TRANS PNP 30V 1A SOT323

TRANS PNP 30V 1A SOT323

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 2DB1694-7 2DB1694DITR-ND 005676-2DB1694-7 2DB1694-7
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2DB1694-7 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP PNP; PNP
Package Type SOT323; SC-70, SOT-323 SOT323; SC-70, SOT-323 SOT3; SOT323; SOT-323
IC(max) 1000 milliamps 1000 milliamps
VCEO 30 volts 30 volts
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