DIODES Incorporated Single Bipolar Transistors 2DB1386Q-13

Description
Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1W Surface Mount SOT-89-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1W Surface Mount SOT-89-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - 2DB1386Q-13DITR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2DB1386Q-13DITR-ND
Single Bipolar Transistors 2DB1386Q-13DITR-ND
Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1W Surface Mount SOT-89-3

Bipolar (BJT) Transistor PNP 20V 5A 100MHz 1W Surface Mount SOT-89-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2DB1386Q-13 - 005674-2DB1386Q-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DB1386Q-13
005674-2DB1386Q-13
TRANSISTORS - Transistors (BJT) - Single - 2DB1386Q-13 005674-2DB1386Q-13
Manufacturer: Diodes Incorporated Win Source Part Number: 005674-2DB1386Q-13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 1V @ 100mA, 4A Collector Cut-off Current(Max): 500nA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 005674-2DB1386Q-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 1V @ 100mA, 4A
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DB1386Q-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2DB1386Q-13
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2DB1386Q-13
TRANS PNP 20V 5A SOT89-3

TRANS PNP 20V 5A SOT89-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2DB1386Q-13
Bipolar Transistors - BJT 2DB1386Q-13
Bipolar Transistors - BJT 1000W -20Vceo

Bipolar Transistors - BJT 1000W -20Vceo

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2DB1386Q-13DITR-ND 005674-2DB1386Q-13 2DB1386Q-13 2DB1386Q-13
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2DB1386Q-13 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP; PNP
Package Type SOT89; TO-243AA SOT3; SOT89; SOT-89-3
Transistor Grade / Operating Range Automotive
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