DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - 2DB1188P-13 2DB1188P-13

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 762160-2DB1188P-13 Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-243AA Mounting: SMD Power - Max: 1W Transistor Type: PNP Frequency - Transition: 120MHz Family Name: 2DB1188P Categories: Discrete Semiconductor Products Manufacturer Package: SOT-89 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 32V Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 500mA, 3V Alternative Parts (Cross-Reference): 2SB1714T100; 2SB1188-P-TP-HF; STB1188; Introduction Date: November 20, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 762160-2DB1188P-13 Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-243AA Mounting: SMD Power - Max: 1W Transistor Type: PNP Frequency - Transition: 120MHz Family Name: 2DB1188P Categories: Discrete Semiconductor Products Manufacturer Package: SOT-89 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 32V Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 500mA, 3V Alternative Parts (Cross-Reference): 2SB1714T100; 2SB1188-P-TP-HF; STB1188; Introduction Date: November 20, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2DB1188P-13 - 762160-2DB1188P-13 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2DB1188P-13
762160-2DB1188P-13
TRANSISTORS - Transistors (BJT) - Single - 2DB1188P-13 762160-2DB1188P-13
Manufacturer: Diodes Incorporated Win Source Part Number: 762160-2DB1188P-13 Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-243AA Mounting: SMD Power - Max: 1W Transistor Type: PNP Frequency - Transition: 120MHz Family Name: 2DB1188P Categories: Discrete Semiconductor Products Manufacturer Package: SOT-89 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 32V Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 500mA, 3V Alternative Parts (Cross-Reference): 2SB1714T100; 2SB1188-P-TP-HF; STB1188; Introduction Date: November 20, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 762160-2DB1188P-13
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-243AA
Mounting: SMD
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 120MHz
Family Name: 2DB1188P
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-89
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 32V
Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 500mA, 3V
Alternative Parts (Cross-Reference): 2SB1714T100; 2SB1188-P-TP-HF; STB1188;
Introduction Date: November 20, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - 2DB1188PDITR-ND - DigiKey
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2DB1188P-13 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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2DB1188P-13
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Supplier's Site
Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 762160-2DB1188P-13 2DB1188PDITR-ND 2DB1188P-13 2DB1188P-13
Product Name TRANSISTORS - Transistors (BJT) - Single - 2DB1188P-13 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP
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