DIODES Incorporated Single Bipolar Transistors 2DB1188P-13

Bipolar (BJT) Transistor PNP 32V 2A 120MHz 1W Surface Mount SOT-89-3

Bipolar (BJT) Transistor PNP 32V 2A 120MHz 1W Surface Mount SOT-89-3

TRANS PNP 32V 2A SOT89-3 Product overview: 2DB1188P-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 32V, 2A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 32V, 2A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2DB1188P-13 can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 762160-2DB1188P-13
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-243AA
Mounting: SMD
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 120MHz
Family Name: 2DB1188P
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-89
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 32V
Vce Saturation (Maximum) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 500mA, 3V
Alternative Parts (Cross-Reference): 2SB1714T100; 2SB1188-P-TP-HF; STB1188;
Introduction Date: November 20, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited