DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - 2DB1132R-13 2DB1132R-13

Manufacturer: Diodes Incorporated
Win Source Part Number: 106571-2DB1132R-13
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 190MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 500nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 100mA, 3V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor PNP 32V 1A 190MHz 1W Surface Mount SOT-89-3

Bipolar (BJT) Transistor PNP 32V 1A 190MHz 1W Surface Mount SOT-89-3

Bipolar (BJT) Transistor PNP 32V 1A 190MHz 1W Surface Mount SOT-89-3

TRANS PNP 32V 1A SOT89-3 Product overview: 2DB1132R-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 32V, 1A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 32V, 1A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2DB1132R-13 can be used for catalog matching and distributor lookup.