DIODES Incorporated 32V 1A SOT89 Bipolar Transistor 2DB1132P-13

TRANS PNP 32V 1A SOT89-3 Product overview: 2DB1132P-13 from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 32V, 1A, SOT89. Search-friendly keywords include transistor, BJT, switching, amplification, 32V, 1A, SOT89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2DB1132P-13 can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 32V 1A 190MHz 1W Surface Mount SOT-89-3

Manufacturer: Diodes Incorporated
Win Source Part Number: 762156-2DB1132P-13
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-243AA
Mounting: SMD
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 190MHz
Family Name: 2DB1132P
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-89-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 32V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum): 500nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 82 @ 100mA, 3V
Alternative Parts (Cross-Reference): 2SB1132-R-TP; 2SB1132Q; 2SB1132-P-TP;
Introduction Date: October 12, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited