D3 Semiconductor, LLC MOSFET D3S190N65E-T

Description
MOSFET 190 mOhm 650V
Description
MOSFET 190 mOhm 650V
Datasheet
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D3S190N65E-T is a 650V Super Junction Power MOSFET in a TO-263 package, designed for high-efficiency power conversion applications such as server power supplies, motor control, and power factor correction. It features a maximum drain-source on-state resistance of 190 mΩ at 25°C, a continuous drain current of 11.8 A at 100°C, and a gate charge of 28 nC. The device supports avalanche energy up to 1.0 mJ for repetitive pulses and has an operating junction temperature range from -55°C to 150°C. Thermal resistance from junction to case is 2.23°C/W. It meets the JESD-22 test standard and is rated for RoHS compliance.

Datasheet Summary
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D3S190N65E-T is a 650V Super Junction Power MOSFET in a TO-263 package, designed for high-efficiency power conversion applications such as server power supplies, motor control, and power factor correction. It features a maximum drain-source on-state resistance of 190 mΩ at 25°C, a continuous drain current of 11.8 A at 100°C, and a gate charge of 28 nC. The device supports avalanche energy up to 1.0 mJ for repetitive pulses and has an operating junction temperature range from -55°C to 150°C. Thermal resistance from junction to case is 2.23°C/W. It meets the JESD-22 test standard and is rated for RoHS compliance.

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Sheung Wan, Hong Kong
MOSFET 190 mOhm 650V

MOSFET 190 mOhm 650V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number D3S190N65E-T
Product Name MOSFET
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