Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34MS04G204TFB013

Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34MS04G204TFB013 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS04G204TFB013
Integrated Circuits (ICs) - Memory - Memory S34MS04G204TFB013
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site
Memory - S34MS04G204TFB013 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34MS04G204TFB013 S34MS04G204TFB013
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Cycle Time 45 ns
Density 4000000 kbits 4000000 kbits
Supply Voltage -40degC ~ 105degC (TA) 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-88735013A - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 16 kbits
View Details
Memory - 54F189DC - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 8.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
2 suppliers
Flash Memory - 1712194 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Package Type SOIC
View Details
Memory - IS29GL01GS-11DHB02 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers