Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34MS04G200TFI003

Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34MS04G200TFI003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS04G200TFI003
Integrated Circuits (ICs) - Memory - Memory S34MS04G200TFI003
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site
Memory - S34MS04G200TFI003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34MS04G200TFI003 S34MS04G200TFI003
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Cycle Time 45 ns
Density 4000000 kbits 4000000 kbits
Supply Voltage -40degC ~ 85degC (TA) 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Quad Memory IC and Storage Component - 774-S25FL064LABNFB040 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
5 suppliers
Integrated Circuits (ICs) - Memory - Memory - 10415FC10 - Acme Chip Technology Co., Limited
Specs
Memory Category Volatile; SRAM Chip
Cycle Time 10 ns
Density 1 kbits
View Details
2 suppliers