Cypress Semiconductor Corp. Memory S34MS04G200BHV000

Description
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS04G200BHV000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Memory - S34MS04G200BHV000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS04G200BHV000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS04G200BHV000
Integrated Circuits (ICs) - Memory - Memory S34MS04G200BHV000
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS04G200BHV000 S34MS04G200BHV000
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 4000000 kbits 4000000 kbits
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