Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34MS04G100TFB003

Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 4GBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34MS04G100TFB003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS04G100TFB003
Integrated Circuits (ICs) - Memory - Memory S34MS04G100TFB003
IC FLASH 4GBIT PARALLEL 48TSOP

IC FLASH 4GBIT PARALLEL 48TSOP

Supplier's Site
Memory - S34MS04G100TFB003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 48-TSOP

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34MS04G100TFB003 S34MS04G100TFB003
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Cycle Time 45 ns
Density 4000000 kbits 4000000 kbits
Supply Voltage Surface Mount 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers
Memory - 27S21DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details