Cypress Semiconductor Corp. Memory S34MS04G100BHI000

Description
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS04G100BHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Memory - S34MS04G100BHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS04G100BHI000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS04G100BHI000
Integrated Circuits (ICs) - Memory - Memory S34MS04G100BHI000
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site
FLASH, 512MX8, 45NS, PBGA63

FLASH, 512MX8, 45NS, PBGA63

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips
Product Number S34MS04G100BHI000 S34MS04G100BHI000 S34MS04G100BHI000
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH - NAND
Access Time 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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