Cypress Semiconductor Corp. Memory S34MS02G200GHI000

Description
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS02G200GHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)

Buy Now Datasheet
Memory - S34MS02G200GHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 67-BGA (8x6.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS02G200GHI000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS02G200GHI000
Integrated Circuits (ICs) - Memory - Memory S34MS02G200GHI000
IC FLASH 2GBIT PARALLEL 67BGA

IC FLASH 2GBIT PARALLEL 67BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS02G200GHI000 S34MS02G200GHI000
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 2000000 kbits 2000000 kbits
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