Cypress Semiconductor Corp. Memory S34MS02G104BHV013

Description
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS02G104BHV013 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS02G104BHV013 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS02G104BHV013
Integrated Circuits (ICs) - Memory - Memory S34MS02G104BHV013
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS02G104BHV013 S34MS02G104BHV013
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 2000000 kbits 2000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - IS29GL128S-10TFV013 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers