Cypress Semiconductor Corp. Memory - Flash - S34MS02G104BHI010 S34MS02G104BHI010

Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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Memory - Flash - S34MS02G104BHI010 - 793609-S34MS02G104BHI010 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - S34MS02G104BHI010
793609-S34MS02G104BHI010
Memory - Flash - S34MS02G104BHI010 793609-S34MS02G104BHI010
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 793609-S34MS02G104BHI010
Series: MS-1
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 63-VFBGA
Mounting: SMD
Technology: FLASH - NAND
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Non-Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 45ns
Family Name: S34MS02G1
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Manufacturer Package: 63-BGA (11x9)
ECCN: 3A991.b.1.a
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - S34MS02G104BHI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Memory - S34MS02G104BHI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS02G104BHI010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS02G104BHI010
Integrated Circuits (ICs) - Memory - Memory S34MS02G104BHI010
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 793609-S34MS02G104BHI010 S34MS02G104BHI010 S34MS02G104BHI010
Product Name Memory - Flash - S34MS02G104BHI010 Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile
Access Time 45 ns 45 ns
Cycle Time 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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