Cypress Semiconductor Corp. Memory - Flash - S34MS02G104BHI010 S34MS02G104BHI010

Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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Product
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Memory - Flash - S34MS02G104BHI010 - 793609-S34MS02G104BHI010 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - S34MS02G104BHI010
793609-S34MS02G104BHI010
Memory - Flash - S34MS02G104BHI010 793609-S34MS02G104BHI010
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 793609-S34MS02G104BH I010 Series: MS-1 Packaging: Tray Operating Temperature Range: -40°C ~ 85°C (TA) Package: 63-VFBGA Mounting: SMD Technology: FLASH - NAND Operating Supply Voltage: 1.7 V ~ 1.95 V Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45ns Family Name: S34MS02G1 Categories: Integrated Circuits (ICs) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Manufacturer Package: 63-BGA (11x9) ECCN: 3A991.b.1.a Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 793609-S34MS02G104BHI010
Series: MS-1
Packaging: Tray
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 63-VFBGA
Mounting: SMD
Technology: FLASH - NAND
Operating Supply Voltage: 1.7 V ~ 1.95 V
Memory Type: Non-Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 45ns
Family Name: S34MS02G1
Categories: Integrated Circuits (ICs)
Memory Format: FLASH
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Manufacturer Package: 63-BGA (11x9)
ECCN: 3A991.b.1.a
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS02G104BHI010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS02G104BHI010
Integrated Circuits (ICs) - Memory - Memory S34MS02G104BHI010
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34MS02G104BHI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Memory - S34MS02G104BHI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 793609-S34MS02G104BHI010 S34MS02G104BHI010 S34MS02G104BHI010
Product Name Memory - Flash - S34MS02G104BHI010 Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH
Access Time 45 ns 45 ns
Cycle Time 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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