Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34MS02G100BHV000

Description
IC FLASH 2GBIT PARALLEL 63BGA
Datasheet
Description
IC FLASH 2GBIT PARALLEL 63BGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34MS02G100BHV000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS02G100BHV000
Integrated Circuits (ICs) - Memory - Memory S34MS02G100BHV000
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34MS02G100BHV000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34MS02G100BHV000 S34MS02G100BHV000
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Cycle Time 45 ns
Density 2000000 kbits 2000000 kbits
Supply Voltage Surface Mount 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL512S-11DHB01-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - MYXXXXX16MP16PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - 24LC16/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 16 kbits
View Details