Cypress Semiconductor Corp. Memory S34MS01G200BHV003

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
  • Memory - S34MS01G200BHV003 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS01G200BHV003 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S34MS01G200BHV003
Memory S34MS01G200BHV003
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number S34MS01G200BHV003
Product Name Memory
Memory Category Flash; FLASH
Access Time 45 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF3A - Texas Instruments
Texas Instruments
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register
CD40105BF3A
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
3V Memory IC and Storage Component - 774-AM29LV004BB-90EF - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
3V Memory IC and Storage Component
AM29LV004BB-90EF
Specs
Memory Category Flash; PROM
View Details
- MC28F008-10 - Rochester Electronics
Rochester Electronics
Memory
MC28F008-10
Specs
Memory Category Flash
Package Type DIP; CDIP
View Details
4 suppliers
Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882861
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details