Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory S34MS01G200BHB003

Description
IC FLASH 1GBIT PARALLEL 63BGA
Datasheet
Description
IC FLASH 1GBIT PARALLEL 63BGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - S34MS01G200BHB003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S34MS01G200BHB003
Integrated Circuits (ICs) - Memory S34MS01G200BHB003
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34MS01G200BHB003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34MS01G200BHB003 S34MS01G200BHB003
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Access Time 45 ns 45 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Memory - IS29GL256S-10DHV023 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers