Cypress Semiconductor Corp. Memory S34MS01G104BHB010

Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34MS01G104BHB010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34MS01G104BHB010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34MS01G104BHB010
Integrated Circuits (ICs) - Memory - Memory S34MS01G104BHB010
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34MS01G104BHB010 S34MS01G104BHB010
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 45 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 1000000 kbits 1000000 kbits
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