Cypress Semiconductor Corp. Memory - Flash - S34MS01G100BHI000 S34MS01G100BHI000

Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1093651-S34MS01G100B HI000 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 45ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-BGA (11x9) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1093651-S34MS01G100B HI000 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 45ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-BGA (11x9) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - S34MS01G100BHI000 - 1093651-S34MS01G100BHI000 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - S34MS01G100BHI000
1093651-S34MS01G100BHI000
Memory - Flash - S34MS01G100BHI000 1093651-S34MS01G100BHI000
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1093651-S34MS01G100B HI000 Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Access Time: 45ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-BGA (11x9) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 1093651-S34MS01G100BHI000
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Access Time: 45ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-BGA (11x9)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - S34MS01G100BHI000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 45 ns 63-BGA (11x9)

Buy Now Datasheet
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1093651-S34MS01G100BHI000 S34MS01G100BHI000 S34MS01G100BHI000
Product Name Memory - Flash - S34MS01G100BHI000 Memory Memory
Memory Category Flash; FLASH Flash; FLASH Flash; FLASH - NAND
Access Time 45 ns 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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