Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34ML08G101BHI003

Description
IC FLASH 8GBIT PARALLEL 63BGA
  • Integrated Circuits (ICs) - Memory - Memory - S34ML08G101BHI003 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - S34ML08G101BHI003 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 8GBIT PARALLEL 63BGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34ML08G101BHI003 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML08G101BHI003
Integrated Circuits (ICs) - Memory - Memory S34ML08G101BHI003
IC FLASH 8GBIT PARALLEL 63BGA

IC FLASH 8GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34ML08G101BHI003 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S34ML08G101BHI003
Memory S34ML08G101BHI003
FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34ML08G101BHI003 S34ML08G101BHI003
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG - Texas Instruments
Texas Instruments
SMV512K32-SP 16MB Radiation-Hardened SRAM
SMV512K32HFG
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
7 suppliers
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882785
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS58LC1001
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Quad Memory IC and Storage Component - 774-S25FL064LABBHI020 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad Memory IC and Storage Component
S25FL064LABBHI020
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
7 suppliers