Cypress Semiconductor Corp. Memory S34ML08G101BHI000

Description
FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)
  • Memory - S34ML08G101BHI000 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - S34ML08G101BHI000 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML08G101BHI000 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S34ML08G101BHI000
Memory S34ML08G101BHI000
FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 8Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Memory - S34ML08G101BHI000 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
S34ML08G101BHI000
Memory S34ML08G101BHI000
IC FLASH 8GBIT PARALLEL 63BGA

IC FLASH 8GBIT PARALLEL 63BGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. ODG (Origin Data Global)
Product Category Memory Chips Memory Chips
Product Number S34ML08G101BHI000 S34ML08G101BHI000
Product Name Memory Memory
Memory Category Flash; FLASH Flash; FLASH - NAND
Unlock Full Specs
to access all available technical data

Similar Products

Quad Memory IC and Storage Component - 774-S25FL064LABNFA013 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad Memory IC and Storage Component
S25FL064LABNFA013
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
4 suppliers
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4DDR232M72A
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882567
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 5962-9089909MUA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9089909MUA
View Details