Cypress Semiconductor Corp. Memory S34ML04G200BHA003

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
  • Memory - S34ML04G200BHA003 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - S34ML04G200BHA003 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML04G200BHA003 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S34ML04G200BHA003
Memory S34ML04G200BHA003
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - S34ML04G200BHA003 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S34ML04G200BHA003
Integrated Circuits (ICs) - Memory S34ML04G200BHA003
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML04G200BHA003 S34ML04G200BHA003
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4013-10N - Lingto Electronic Limited
Rochester Electronics
Logic - FIFOs Memory
67C4013-10N
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details
5V Memory IC and Storage Component - 774-MT5C1005C-25L-883C - ERSAELECTRONICS PTE. LTD.
Micross Components, Inc.
5V Memory IC and Storage Component
MT5C1005C-25L-883C
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory IC and Storage Component - 774-93425DMQB30 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
93425DMQB30
Specs
Memory Category Volatile; SRAM Chip
Access Time 30 ns
Cycle Time 20 ns
View Details
4 suppliers
Quad Memory IC and Storage Component - 774-S25FL032P0XNFB001 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad Memory IC and Storage Component
S25FL032P0XNFB001
Specs
Memory Category Flash; Non-Volatile
Cycle Time 5000 to 3.00E6 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
4 suppliers