Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory S34ML04G200BHA000

Description
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND
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Description
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND
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Suppliers

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Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1019142-S34ML04G200BHA000 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1019142-S34ML04G200BHA000
Integrated Circuits (ICs) - Memory 1019142-S34ML04G200BHA000
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND

Win Source Part Number: 1019142-S34ML04G200BHA000
Category: Integrated Circuits (ICs)>Memory
Series: ML-2
Package: Tray
Standard Package: 210
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 4Gb (512M x 8)
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 84 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Cypress Semiconductor Corp
Other Names: -S34ML04G200BHA000,428-4263,S34ML04G200BHA000-ND

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML04G200BHA000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G200BHA000
Integrated Circuits (ICs) - Memory - Memory S34ML04G200BHA000
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34ML04G200BHA000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1019142-S34ML04G200BHA000 S34ML04G200BHA000 S34ML04G200BHA000
Product Name Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH
Cycle Time 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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