Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory S34ML04G200BHA000

Description
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND
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Description
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND
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Suppliers

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Product
Description
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Integrated Circuits (ICs) - Memory - 1019142-S34ML04G200BHA000 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1019142-S34ML04G200BHA000
Integrated Circuits (ICs) - Memory 1019142-S34ML04G200BHA000
Win Source Part Number: 1019142-S34ML04G200B HA000 Category: Integrated Circuits (ICs)>Memory Series: ML-2 Package: Tray Standard Package: 210 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 4Gb (512M x 8) Voltage - Supply: 2.7V ~ 3.6V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: -S34ML04G200BHA000,4 28-4263,S34ML04G200B HA000-ND

Win Source Part Number: 1019142-S34ML04G200BHA000
Category: Integrated Circuits (ICs)>Memory
Series: ML-2
Package: Tray
Standard Package: 210
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 4Gb (512M x 8)
Voltage - Supply: 2.7V ~ 3.6V
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 84 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Cypress Semiconductor Corp
Other Names: -S34ML04G200BHA000,428-4263,S34ML04G200BHA000-ND

Buy Now Datasheet
Memory - S34ML04G200BHA000 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML04G200BHA000 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G200BHA000
Integrated Circuits (ICs) - Memory - Memory S34ML04G200BHA000
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 1019142-S34ML04G200BHA000 S34ML04G200BHA000 S34ML04G200BHA000
Product Name Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile
Cycle Time 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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