Cypress Semiconductor Corp. Memory S34ML04G104BHV013

Description
IC FLASH 4GBIT PARALLEL 63BGA
Datasheet
Description
IC FLASH 4GBIT PARALLEL 63BGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site Datasheet
Memory - S34ML04G104BHV013 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML04G104BHV013 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G104BHV013
Integrated Circuits (ICs) - Memory - Memory S34ML04G104BHV013
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S34ML04G104BHV013 S34ML04G104BHV013 S34ML04G104BHV013
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH - NAND Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - S25FL127SABBHIC00Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers
Memory - 593995-001-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details