Cypress Semiconductor Corp. Memory S34ML04G104BHV013

Description
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML04G104BHV013 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 4Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML04G104BHV013 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML04G104BHV013
Integrated Circuits (ICs) - Memory - Memory S34ML04G104BHV013
IC FLASH 4GBIT PARALLEL 63BGA

IC FLASH 4GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S34ML04G104BHV013 S34ML04G104BHV013 S34ML04G104BHV013
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; FLASH - NAND Flash; Non-Volatile
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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