Cypress Semiconductor Corp. Memory S34ML02G200GHI003

Description
FLASH - NAND Memory IC 2Gbit Parallel 67-BGA (8x6.5)
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 67-BGA (8x6.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML02G200GHI003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 67-BGA (8x6.5)

FLASH - NAND Memory IC 2Gbit Parallel 67-BGA (8x6.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - S34ML02G200GHI003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S34ML02G200GHI003
Integrated Circuits (ICs) - Memory S34ML02G200GHI003
IC FLASH 2GBIT PARALLEL 67BGA

IC FLASH 2GBIT PARALLEL 67BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML02G200GHI003 S34ML02G200GHI003
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882864 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - IS29GL01GS-11DHV02 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 1000000 kbits
View Details
2 suppliers