Cypress Semiconductor Corp. Memory S34ML02G104BHB010

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML02G104BHB010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - S34ML02G104BHB010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S34ML02G104BHB010
Integrated Circuits (ICs) - Memory S34ML02G104BHB010
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML02G104BHB010 S34ML02G104BHB010
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C1008CW-45/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - JM38510/23113BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details