Cypress Semiconductor Corp. Memory S34ML02G104BHA010

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML02G104BHA010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML02G104BHA010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML02G104BHA010
Integrated Circuits (ICs) - Memory - Memory S34ML02G104BHA010
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML02G104BHA010 S34ML02G104BHA010
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Integrated Circuits (ICs) - Memory - Memory - DM77S184J-MIL - Acme Chip Technology Co., Limited
Specs
Memory Category PROM; Non-Volatile
Cycle Time 70 ns
Density 8 kbits
View Details
2 suppliers
Memory - 448-S25FL064LABMFB000-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 64000 kbits
View Details
5 suppliers
Memory - MT5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details