Cypress Semiconductor Corp. Memory S34ML01G100BHV003

Description
FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)
Description
FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)
Datasheet
Datasheet Summary
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The S34ML01G100BHV003 is a 1 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features an 8-bit or 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. The device supports a maximum random access read time of 25 ¬µs and a sequential access time of 25 ns, with typical program times of 200 ¬µs. Block erase times are approximately 2.0 ms for the 1 Gb version. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and operates at a supply voltage of 3.3 V, with a range from 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The operating temperature range is suitable for industrial applications (-40 ¬8C to 85 ¬8C) and automotive applications (-40 ¬8C to 105 ¬8C). The S34ML01G100BHV003 is available in lead-free and low halogen packaging options, including a 48-Pin TSOP and a 63-Ball BGA configuration. This device is suitable for applications requiring reliable and efficient memory solutions.

Datasheet Summary
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The S34ML01G100BHV003 is a 1 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features an 8-bit or 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. The device supports a maximum random access read time of 25 ¬µs and a sequential access time of 25 ns, with typical program times of 200 ¬µs. Block erase times are approximately 2.0 ms for the 1 Gb version. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and operates at a supply voltage of 3.3 V, with a range from 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The operating temperature range is suitable for industrial applications (-40 ¬8C to 85 ¬8C) and automotive applications (-40 ¬8C to 105 ¬8C). The S34ML01G100BHV003 is available in lead-free and low halogen packaging options, including a 48-Pin TSOP and a 63-Ball BGA configuration. This device is suitable for applications requiring reliable and efficient memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML01G100BHV003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML01G100BHV003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML01G100BHV003
Integrated Circuits (ICs) - Memory - Memory S34ML01G100BHV003
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML01G100BHV003 S34ML01G100BHV003
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
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