Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory S34ML01G100BHV003

Description
IC FLASH 1GBIT PARALLEL 63BGA
Description
IC FLASH 1GBIT PARALLEL 63BGA
Datasheet
Datasheet Summary
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The S34ML01G100BHV003 is a 1 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features an 8-bit or 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. The device supports a maximum random access read time of 25 ¬µs and a sequential access time of 25 ns, with typical program times of 200 ¬µs. Block erase times are approximately 2.0 ms for the 1 Gb version. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and operates at a supply voltage of 3.3 V, with a range from 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The operating temperature range is suitable for industrial applications (-40 ¬8C to 85 ¬8C) and automotive applications (-40 ¬8C to 105 ¬8C). The S34ML01G100BHV003 is available in lead-free and low halogen packaging options, including a 48-Pin TSOP and a 63-Ball BGA configuration. This device is suitable for applications requiring reliable and efficient memory solutions.

Datasheet Summary
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The S34ML01G100BHV003 is a 1 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for embedded applications. It features an 8-bit or 16-bit input/output bus width, with a page size of 2112 bytes for x8 and 1056 words for x16 configurations. The device supports a maximum random access read time of 25 ¬µs and a sequential access time of 25 ns, with typical program times of 200 ¬µs. Block erase times are approximately 2.0 ms for the 1 Gb version. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and operates at a supply voltage of 3.3 V, with a range from 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The operating temperature range is suitable for industrial applications (-40 ¬8C to 85 ¬8C) and automotive applications (-40 ¬8C to 105 ¬8C). The S34ML01G100BHV003 is available in lead-free and low halogen packaging options, including a 48-Pin TSOP and a 63-Ball BGA configuration. This device is suitable for applications requiring reliable and efficient memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - S34ML01G100BHV003 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML01G100BHV003
Integrated Circuits (ICs) - Memory - Memory S34ML01G100BHV003
IC FLASH 1GBIT PARALLEL 63BGA

IC FLASH 1GBIT PARALLEL 63BGA

Supplier's Site
Memory - S34ML01G100BHV003 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 1Gbit Parallel 63-BGA (11x9)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S34ML01G100BHV003 S34ML01G100BHV003
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
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