Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory S29VS064RABBHI010

Description
S29VS064R - 1.8 V, Multiplexed, Burst MirrorBit Flash
Request a Quote Datasheet
Description
S29VS064R - 1.8 V, Multiplexed, Burst MirrorBit Flash
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - S29VS064RABBHI010 - Rochester Electronics
Newburyport, MA, United States
S29VS064R - 1.8 V, Multiplexed, Burst MirrorBit Flash

S29VS064R - 1.8 V, Multiplexed, Burst MirrorBit Flash

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - S29VS064RABBHI010 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S29VS064RABBHI010
Integrated Circuits (ICs) - Memory S29VS064RABBHI010
IC FLASH 64MBIT PARALLEL 44FBGA

IC FLASH 64MBIT PARALLEL 44FBGA

Supplier's Site

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S29VS064RABBHI010 S29VS064RABBHI010
Product Name Integrated Circuits (ICs) - Memory
Memory Category Flash Flash; Non-Volatile
Package Type BGA; VFBGA44 BGA
Data Rate 108 MHz
Access Time 80 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 93415FMQB - Quarktwin Technology Ltd.
Texas Instruments
View Details
2 suppliers
Memory - AS5SP128K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details
Memory - 520966230646 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers