Cypress Semiconductor Corp. Memory S29GL512P10FFIR10

Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL512P10FFIR10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 64-FBGA (11x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S29GL512P10FFIR10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S29GL512P10FFIR10
Integrated Circuits (ICs) - Memory - Memory S29GL512P10FFIR10
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips
Product Number S29GL512P10FFIR10 S29GL512P10FFIR10 S29GL512P10FFIR10
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH - NOR
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits
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