Cypress Semiconductor Corp. S29GL256N10FAA020

Description
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
  • S29GL256N10FAA020 - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- S29GL256N10FAA020 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
S29GL256N10FAA020
S29GL256N10FAA020
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Memory Chips
Product Number S29GL256N10FAA020
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420770P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - S25FL064P0XNFV003M - Lingto Electronic Limited
Infineon Technologies AG
Memory
S25FL064P0XNFV003M
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
2 suppliers
Memory - AS5C4008 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C4008
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S25FL164K0XMFI000 - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL164K0XMFI000
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details