Cypress Semiconductor Corp. Memory S29GL032N11FFIS10

Description
FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 110ns 64-FBGA (13x11)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 110ns 64-FBGA (13x11)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 2015-S29GL032N11FFIS10-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 110ns 64-FBGA (13x11)

FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Parallel 110ns 64-FBGA (13x11)

Buy Now Datasheet
 - S29GL032N11FFIS10 - Rochester Electronics
Newburyport, MA, United States
S29GL032N - 3V Page Mode MirrorBit Flash

S29GL032N - 3V Page Mode MirrorBit Flash

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1255029-S29GL032N11FFIS10 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1255029-S29GL032N11FFIS10
Integrated Circuits (ICs) - Memory 1255029-S29GL032N11FFIS10
Win Source Part Number: 1255029-S29GL032N11F FIS10 Category: Integrated Circuits (ICs)>Memory Series: GL-N Package: Tray Standard Package: 180 Mounting: SMD (SMT) Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 32Mb (4M x 8, 2M x 16) Access Time: 110 ns Voltage - Supply: 1.65V ~ 3.6V Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel ECCN: 3A991B1A Fake Threat In the Open Market: 84 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0071 Mfr: Cypress Semiconductor Corp Other Names: 2832-S29GL032N11FFIS 10-428,2832-S29GL032 N11FFIS10,2015-S29GL 032N11FFIS10 Product Status: Obsolete

Win Source Part Number: 1255029-S29GL032N11FFIS10
Category: Integrated Circuits (ICs)>Memory
Series: GL-N
Package: Tray
Standard Package: 180
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 32Mb (4M x 8, 2M x 16)
Access Time: 110 ns
Voltage - Supply: 1.65V ~ 3.6V
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 84 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Cypress Semiconductor Corp
Other Names: 2832-S29GL032N11FFIS10-428,2832-S29GL032N11FFIS10,2015-S29GL032N11FFIS10
Product Status: Obsolete

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - S29GL032N11FFIS10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
S29GL032N11FFIS10
Integrated Circuits (ICs) - Memory S29GL032N11FFIS10
IC FLASH 32MBIT PARALLEL 64FBGA

IC FLASH 32MBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 2015-S29GL032N11FFIS10-ND S29GL032N11FFIS10 1255029-S29GL032N11FFIS10 S29GL032N11FFIS10
Product Name Memory Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory
Memory Category Flash Flash Flash; Non-Volatile Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits
Package Type 64-LBGA BGA; FBGA64 BGA
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