Nonvolatile SRAM (nvSRAM) combines Cypress's industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns. On a power failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory, where the data is protected for over 20 years. The transfer between SRAM and nonvolatile memory is completely parallel, allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation continues from where it left off. nvSRAM also provides user controlled software STORE and RECALL initiation commands, as well as a user controlled hardware STORE command in most versions. Cypress's nvSRAMs are offered in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages. Cypress nvSRAM Key Features
64Kb to 16Mb devices
Asynchronous parallel and ONFI 1.0 interface options
Serial interface options
As low as 20 ns access times
Infinite endurance
No batteries required to store data on power loss; RoHS compliant
Optional Real Time Clock (RTC)
nvSRAM TechnologyCypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.
Nonvolatile SRAM (nvSRAM) combines Cypress's industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns.
On a power failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory, where the data is protected for over 20 years. The transfer between SRAM and nonvolatile memory is completely parallel, allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation continues from where it left off. nvSRAM also provides user controlled software STORE and RECALL initiation commands, as well as a user controlled hardware STORE command in most versions.
Cypress's nvSRAMs are offered in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.
Cypress nvSRAM Key Features
- 64Kb to 16Mb devices
- Asynchronous parallel and ONFI 1.0 interface options
- Serial interface options
- As low as 20 ns access times
- Infinite endurance
- No batteries required to store data on power loss; RoHS compliant
- Optional Real Time Clock (RTC)
nvSRAM TechnologyCypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.
