Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory FM28V100-TG

IC FRAM 1MBIT PARALLEL 32TSOP I

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001218-FM28V100-TG
Packaging: Tray
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (128K x 8)
Access Time: 90ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 32-TSOP I
Supply Voltage - Operating: 2 V to 3.6 V
Memory Format: FRAM
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) Parallel 90 ns 32-TSOP I

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 1Mbit
Organisation = 128K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 60ns
Mounting Type = Surface Mount
Package Type = TSOP
Pin Count = 32
Dimensions = 11.9 x 8.1 x 1.05mm
Length = 11.9mm
Width = 8.1mm
Delivery on production packaging - Punnet. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 1Mbit
Organisation = 128K x 8 bit
Interface Type = Parallel
Data Bus Width = 8bit
Maximum Random Access Time = 60ns
Mounting Type = Surface Mount
Package Type = TSOP
Pin Count = 32
Dimensions = 8 x 11.8 x 1.2mm
Length = 8mm

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 1Mbit
Organisation = 128K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 60ns
Mounting Type = Surface Mount
Package Type = TSOP
Pin Count = 32
Dimensions = 11.9 x 8.1 x 1.05mm
Length = 11.9mm
Width = 8.1mm