Cypress Semiconductor Corp. Memory FM28V020-SG

Description
FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 140 ns 28-SOIC
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Suppliers

Company
Product
Description
Supplier Links
Memory - FM28V020-SG - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 140 ns 28-SOIC

FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 140 ns 28-SOIC

Supplier's Site Datasheet
 - 1254229 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 256kbit Organisation = 32K x 8 bit Interface Type = Parallel Maximum Random Access Time = 70ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 28 Dimensions = 18.11 x 7.62 x 2.37mm Length = 18.11mm Maximum Operating Supply Voltage = 3.6 V

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 70ns
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 28
Dimensions = 18.11 x 7.62 x 2.37mm
Length = 18.11mm
Maximum Operating Supply Voltage = 3.6 V

Supplier's Site
 - 1254229P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 256kbit Organisation = 32K x 8 bit Interface Type = Parallel Maximum Random Access Time = 70ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 28 Dimensions = 18.11 x 7.62 x 2.37mm Length = 18.11mm Maximum Operating Supply Voltage = 3.6 V Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 70ns
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 28
Dimensions = 18.11 x 7.62 x 2.37mm
Length = 18.11mm
Maximum Operating Supply Voltage = 3.6 V
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Integrated Circuits (ICs) - Memory - FM28V020-SG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
FM28V020-SG
Integrated Circuits (ICs) - Memory FM28V020-SG
IC FRAM 256KBIT PARALLEL 28SOIC

IC FRAM 256KBIT PARALLEL 28SOIC

Supplier's Site
Memory - RAM - FM28V020-SG - 001216-FM28V020-SG - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM28V020-SG
001216-FM28V020-SG
Memory - RAM - FM28V020-SG 001216-FM28V020-SG
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 001216-FM28V020-SG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Access Time: 140ns Family Name: FM28V020 Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 28-SOIC Supply Voltage - Operating: 2 V to 3.6 V Memory Format: FRAM Alternative Parts (Cross-Reference): MB85R256PF; MB85R256FPF-G-BND-ER E1; MB85R256FPF-G-BNDE1 ; MB85R256PF-G-BNDE1; Introduction Date: April 14, 2009 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001216-FM28V020-SG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Access Time: 140ns
Family Name: FM28V020
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 28-SOIC
Supply Voltage - Operating: 2 V to 3.6 V
Memory Format: FRAM
Alternative Parts (Cross-Reference): MB85R256PF; MB85R256FPF-G-BND-ERE1; MB85R256FPF-G-BNDE1 ; MB85R256PF-G-BNDE1;
Introduction Date: April 14, 2009
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Nova Technology(HK) Co.,Ltd RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Win Source Electronics
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM28V020-SG 1254229 FM28V020-SG 001216-FM28V020-SG
Product Name Memory Integrated Circuits (ICs) - Memory Memory - RAM - FM28V020-SG
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 256 kbits 256 kbits
Package Type SOIC; 28-SOIC (0.295", 7.50mm Width) SOIC SOIC SOIC; 28-SOIC
Memory Category NVRAM; FRAM Non-Volatile FRAM
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