Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory FM25V02A-DG

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = SPI
Data Bus Width = 8bit
Mounting Type = Surface Mount
Package Type = DFN
Pin Count = 8
Dimensions = 4 x 4.5 x 0.7mm
Length = 4mm
Maximum Operating Supply Voltage = 3.6 V
Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = SPI
Data Bus Width = 8bit
Mounting Type = Surface Mount
Package Type = DFN
Pin Count = 8
Dimensions = 4 x 4.5 x 0.7mm
Length = 4mm
Maximum Operating Supply Voltage = 3.6 V

IC FRAM 256KBIT SPI 40MHZ 8DFN

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 919170-FM25V02A-DG
Series: F-RAM™
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) SPI 8-DFN (4x4.5)
Package: 8-WDFN Exposed Pad
Package: Tube
Mounting: Surface Mount
Family Name: FM25V02
Categories: Integrated Circuits (ICs)
Case / Package: 8-DFN (4x4.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Balance
Quantity per package: 162
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 22 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Other Part Number: 428-3852, FM25V02A-DG-ND