Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory FM25V01-G

FRAM (FERROELECTRIC RAM) MEMORY

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 128kbit
Organisation = 16K x 8 bit
Interface Type = SPI
Data Bus Width = 8bit
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.978 x 3.987 x 1.478mm
Length = 4.98mm
Maximum Operating Supply Voltage = 3.6 V

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 128kbit
Organisation = 16K x 8 bit
Interface Type = SPI
Data Bus Width = 8bit
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.978 x 3.987 x 1.478mm
Length = 4.98mm
Maximum Operating Supply Voltage = 3.6 V
Delivery on production packaging - Tube. This product is non-returnable.

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001208-FM25V01-G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Family Name: FM25V01
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-SOIC
Supply Voltage - Operating: 2 V to 3.6 V
Memory Format: FRAM
Max Frequency: 40MHz
Alternative Parts (Cross-Reference): MB85RS128BPNF-G-JNERE1; MB85RS128BPNF-G-JNE1; MB85RC128APNF-G-JNERE1; MB85RC128APNF-G-JNE1;
Introduction Date: June 17, 2010
ECCN: ERA99
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

FRAM (Ferroelectric RAM) Memory IC 128Kb (16K x 8) SPI 40 MHz 8-SOIC