Cypress Semiconductor Corp. Memory FM25L16B-G

Description
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 16kbit Organisation = 2K x 8 bit Interface Type = SPI Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Maximum Operating Supply Voltage = 3.6 V Width = 3.98mm
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Suppliers

Company
Product
Description
Supplier Links
 - 1254226 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 16kbit Organisation = 2K x 8 bit Interface Type = SPI Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Maximum Operating Supply Voltage = 3.6 V Width = 3.98mm

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 16kbit
Organisation = 2K x 8 bit
Interface Type = SPI
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Maximum Operating Supply Voltage = 3.6 V
Width = 3.98mm

Supplier's Site
 - 1254226P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 16kbit Organisation = 2K x 8 bit Interface Type = SPI Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Maximum Operating Supply Voltage = 3.6 V Width = 3.98mm Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 16kbit
Organisation = 2K x 8 bit
Interface Type = SPI
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Maximum Operating Supply Voltage = 3.6 V
Width = 3.98mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Memory - FM25L16B-G - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) SPI 20 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) SPI 20 MHz 8-SOIC

Supplier's Site Datasheet
Memory - RAM - FM25L16B-G - 001206-FM25L16B-G - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM25L16B-G
001206-FM25L16B-G
Memory - RAM - FM25L16B-G 001206-FM25L16B-G
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 001206-FM25L16B-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 16Kb (2K x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 8-SOIC Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FRAM Max Frequency: 20MHz Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001206-FM25L16B-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 8-SOIC
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FRAM
Max Frequency: 20MHz
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - FM25L16B-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
FM25L16B-G
Integrated Circuits (ICs) - Memory FM25L16B-G
IC FRAM 16KBIT SPI 20MHZ 8SOIC

IC FRAM 16KBIT SPI 20MHZ 8SOIC

Supplier's Site
Memory IC - 48865661 - Radwell International
Willingboro, NJ, United States
Memory IC
48865661
Memory IC 48865661
FRAM, 2KX8, SERIAL, SPI, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

FRAM, 2KX8, SERIAL, SPI, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  RS Components, Ltd. Nova Technology(HK) Co.,Ltd Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1254226 FM25L16B-G 001206-FM25L16B-G FM25L16B-G 48865661
Product Name Memory Memory - RAM - FM25L16B-G Integrated Circuits (ICs) - Memory Memory IC
Memory Category NVRAM; FRAM FRAM Non-Volatile
Density 16 kbits 16 kbits 16 kbits
Package Type SOIC SOIC; 8-SOIC (0.154", 3.90mm Width) SOIC; 8-SOIC SOIC
Pins 8
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