Cypress Semiconductor Corp. Memory - RAM - FM25L04B-GA FM25L04B-GA

Description
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1039081-FM25L04B-GA Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 4Kb (512 x 8) Categories: Integrated Circuits Temperature Range - Operating: -40°C to 125°C (TA) Case / Package: 8-SOIC Supply Voltage - Operating: 3 V to 3.6 V Memory Format: FRAM Max Frequency: 10MHz Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
Memory - RAM - FM25L04B-GA - 1039081-FM25L04B-GA - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM25L04B-GA
1039081-FM25L04B-GA
Memory - RAM - FM25L04B-GA 1039081-FM25L04B-GA
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 1039081-FM25L04B-GA Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 4Kb (512 x 8) Categories: Integrated Circuits Temperature Range - Operating: -40°C to 125°C (TA) Case / Package: 8-SOIC Supply Voltage - Operating: 3 V to 3.6 V Memory Format: FRAM Max Frequency: 10MHz Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 1039081-FM25L04B-GA
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 125°C (TA)
Case / Package: 8-SOIC
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: FRAM
Max Frequency: 10MHz
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Memory - FM25L04B-GA - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 4Kb (512 x 8) SPI 10 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 4Kb (512 x 8) SPI 10 MHz 8-SOIC

Supplier's Site Datasheet
Memory - FM25L04B-GA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FRAM (Ferroelectric RAM) Memory IC 4Kbit SPI 10 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 4Kbit SPI 10 MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - FM25L04B-GA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
FM25L04B-GA
Integrated Circuits (ICs) - Memory - Memory FM25L04B-GA
IC FRAM 4KBIT SPI 10MHZ 8SOIC

IC FRAM 4KBIT SPI 10MHZ 8SOIC

Supplier's Site
 - 1254225 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 4kbit Organisation = 512 x 8 bit Interface Type = SPI Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Width = 3.98mm Maximum Operating Supply Voltage = 3.6 V

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 4kbit
Organisation = 512 x 8 bit
Interface Type = SPI
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Width = 3.98mm
Maximum Operating Supply Voltage = 3.6 V

Supplier's Site
 - 1254225P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 4kbit Organisation = 512 x 8 bit Interface Type = SPI Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.97 x 3.98 x 1.48mm Length = 4.97mm Width = 3.98mm Maximum Operating Supply Voltage = 3.6 V Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 4kbit
Organisation = 512 x 8 bit
Interface Type = SPI
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 8
Dimensions = 4.97 x 3.98 x 1.48mm
Length = 4.97mm
Width = 3.98mm
Maximum Operating Supply Voltage = 3.6 V
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  Win Source Electronics Nova Technology(HK) Co.,Ltd Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1039081-FM25L04B-GA FM25L04B-GA FM25L04B-GA FM25L04B-GA 1254225
Product Name Memory - RAM - FM25L04B-GA Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category FRAM FRAM; FRAM Non-Volatile NVRAM; FRAM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type SOIC; 8-SOIC SOIC; 8-SOIC (0.154", 3.90mm Width) SOIC; 8-SOIC (0.154\", 3.90mm Width) SOIC
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