Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory FM22L16-55-TG

Description
IC FRAM 4MBIT PARALLEL 44TSOP II
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Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - FM22L16-55-TG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
FM22L16-55-TG
Integrated Circuits (ICs) - Memory - Memory FM22L16-55-TG
IC FRAM 4MBIT PARALLEL 44TSOP II

IC FRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
 - 1254206P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 4Mbit Organisation = 256K x 16 bit Interface Type = Parallel Maximum Random Access Time = 55ns Mounting Type = Surface Mount Package Type = TSOP Pin Count = 44 Dimensions = 18.51 x 10.26 x 1.04mm Length = 18.51mm Width = 10.26mm Delivery on production packaging - Punnet. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 4Mbit
Organisation = 256K x 16 bit
Interface Type = Parallel
Maximum Random Access Time = 55ns
Mounting Type = Surface Mount
Package Type = TSOP
Pin Count = 44
Dimensions = 18.51 x 10.26 x 1.04mm
Length = 18.51mm
Width = 10.26mm
Delivery on production packaging - Punnet. This product is non-returnable.

Supplier's Site
 - 1254206 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 4Mbit Organisation = 256K x 16 bit Interface Type = Parallel Maximum Random Access Time = 55ns Mounting Type = Surface Mount Package Type = TSOP Pin Count = 44 Dimensions = 18.51 x 10.26 x 1.04mm Length = 18.51mm Width = 10.26mm

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 4Mbit
Organisation = 256K x 16 bit
Interface Type = Parallel
Maximum Random Access Time = 55ns
Mounting Type = Surface Mount
Package Type = TSOP
Pin Count = 44
Dimensions = 18.51 x 10.26 x 1.04mm
Length = 18.51mm
Width = 10.26mm

Supplier's Site
Memory - FM22L16-55-TG - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 110 ns 44-TSOP II

FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 110 ns 44-TSOP II

Supplier's Site Datasheet
Memory - RAM - FM22L16-55-TG - 001189-FM22L16-55-TG - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM22L16-55-TG
001189-FM22L16-55-TG
Memory - RAM - FM22L16-55-TG 001189-FM22L16-55-TG
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 001189-FM22L16-55-TG Packaging: Tray Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mb (256K x 16) Access Time: 110ns Family Name: FM22L16 Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 44-TSOP II Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FRAM Alternative Parts (Cross-Reference): MB85R4M2TFN-G-ASE1; FM22L16-55-TGTR; Introduction Date: March 01, 2007 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 001189-FM22L16-55-TG
Packaging: Tray
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mb (256K x 16)
Access Time: 110ns
Family Name: FM22L16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 44-TSOP II
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FRAM
Alternative Parts (Cross-Reference): MB85R4M2TFN-G-ASE1; FM22L16-55-TGTR;
Introduction Date: March 01, 2007
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. Nova Technology(HK) Co.,Ltd Win Source Electronics
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM22L16-55-TG 1254206P FM22L16-55-TG 001189-FM22L16-55-TG
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory - RAM - FM22L16-55-TG
Memory Category Non-Volatile NVRAM; FRAM FRAM
Cycle Time 110 ns
Density 4000 kbits 4000 kbits
Supply Voltage Surface Mount 2.7 V ~ 3.6 V
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