Cypress Semiconductor Corp. Integrated Circuits (ICs) - Memory - Memory FM18W08-SG

Description
FRAM (FERROELECTRIC RAM) MEMORY
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Integrated Circuits (ICs) - Memory - Memory - FM18W08-SG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
FM18W08-SG
Integrated Circuits (ICs) - Memory - Memory FM18W08-SG
FRAM (FERROELECTRIC RAM) MEMORY

FRAM (FERROELECTRIC RAM) MEMORY

Supplier's Site
Memory - RAM - FM18W08-SG - 016304-FM18W08-SG - Win Source Electronics
Yishun, Singapore
Memory - RAM - FM18W08-SG
016304-FM18W08-SG
Memory - RAM - FM18W08-SG 016304-FM18W08-SG
Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 016304-FM18W08-SG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: FRAM (Ferroelectric RAM) Memory Size: 256Kb (32K x 8) Family Name: FM18W08 Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 28-SOIC Supply Voltage - Operating: 2.7 V to 5.5 V Memory Format: FRAM Alternative Parts (Cross-Reference): MB85R256FPNF-G-JNERE 2; MB85R256PF-E1; MB85R256PF; MB85R256FPF-G-BND-ER E1; Introduction Date: March 10, 2011 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Cypress Semiconductor Corp
Win Source Part Number: 016304-FM18W08-SG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Family Name: FM18W08
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 28-SOIC
Supply Voltage - Operating: 2.7 V to 5.5 V
Memory Format: FRAM
Alternative Parts (Cross-Reference): MB85R256FPNF-G-JNERE2; MB85R256PF-E1; MB85R256PF; MB85R256FPF-G-BND-ERE1;
Introduction Date: March 10, 2011
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - 1254205 - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 256kbit Organisation = 32K x 8 bit Interface Type = Parallel Maximum Random Access Time = 70ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 28 Dimensions = 18.11 x 7.62 x 2.37mm Length = 18.11mm Maximum Operating Supply Voltage = 5.5 V

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 70ns
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 28
Dimensions = 18.11 x 7.62 x 2.37mm
Length = 18.11mm
Maximum Operating Supply Voltage = 5.5 V

Supplier's Site
 - 1254205P - RS Components, Ltd.
Corby, Northants, United Kingdom
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption Memory Size = 256kbit Organisation = 32K x 8 bit Interface Type = Parallel Maximum Random Access Time = 70ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 28 Dimensions = 18.11 x 7.62 x 2.37mm Length = 18.11mm Maximum Operating Supply Voltage = 5.5 V Delivery on production packaging - Tube. This product is non-returnable.

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory. Fast write speed. High endurance. Low power consumption
Memory Size = 256kbit
Organisation = 32K x 8 bit
Interface Type = Parallel
Maximum Random Access Time = 70ns
Mounting Type = Surface Mount
Package Type = SOIC
Pin Count = 28
Dimensions = 18.11 x 7.62 x 2.37mm
Length = 18.11mm
Maximum Operating Supply Voltage = 5.5 V
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Memory - FM18W08-SG - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 28-SOIC

FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 28-SOIC

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Win Source Electronics RS Components, Ltd. Nova Technology(HK) Co.,Ltd
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM18W08-SG 016304-FM18W08-SG 1254205 FM18W08-SG
Product Name Integrated Circuits (ICs) - Memory - Memory Memory - RAM - FM18W08-SG Memory
Memory Category Non-Volatile FRAM NVRAM; FRAM
Cycle Time 130 ns
Density 256 kbits 256 kbits 256 kbits
Package Type SOIC SOIC; 28-SOIC SOIC SOIC; 28-SOIC (0.295", 7.50mm Width)
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