Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM. F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored. F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories typically have less than 1 million cycle endurance, forcing system designers to use complex wear-leveling routines and up to 4x more density to prolong the lifetime of these memories. F-RAM consumes as low as 300 µA active and 6 µA standby current. Because of fast write speeds, F-RAM stays active for short periods of time, yielding very low energy consumption. Traditional nonvolatile memories with write delays must stay active for longer periods of time, resulting in higher energy consumption. Serial F-RAM offers a pin-to-pin and footprint compatible EEPROM replacement. Cypress F-RAM Key Features
4Kb to 4Mb densities
Serial QSPI, DSPI, SPI and I2C interface options
Parallel interface options
Low power, instant data capture on power loss
100-trillion read/write cycle endurance
No batteries required to store data on power loss; RoHS compliant
Radiation and magnetic field tolerant
Processor Companions with integrated analog and digital functions
F-RAM TechnologyCypress F-RAM is built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. A common misconception is that ferroelectric crystals are ferromagnetic or have similar magnetic properties. In fact, ferroelectric materials switch in an electric field and are not affected by magnetic fields.
Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM.
F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored.
F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories typically have less than 1 million cycle endurance, forcing system designers to use complex wear-leveling routines and up to 4x more density to prolong the lifetime of these memories.
F-RAM consumes as low as 300 µA active and 6 µA standby current. Because of fast write speeds, F-RAM stays active for short periods of time, yielding very low energy consumption. Traditional nonvolatile memories with write delays must stay active for longer periods of time, resulting in higher energy consumption.
Serial F-RAM offers a pin-to-pin and footprint compatible EEPROM replacement.
Cypress F-RAM Key Features
- 4Kb to 4Mb densities
- Serial QSPI, DSPI, SPI and I2C interface options
- Parallel interface options
- Low power, instant data capture on power loss
- 100-trillion read/write cycle endurance
- No batteries required to store data on power loss; RoHS compliant
- Radiation and magnetic field tolerant
- Processor Companions with integrated analog and digital functions
F-RAM TechnologyCypress F-RAM is built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. A common misconception is that ferroelectric crystals are ferromagnetic or have similar magnetic properties. In fact, ferroelectric materials switch in an electric field and are not affected by magnetic fields.
